withstand higher voltages before experiencing unpredictable conduction behavior and potentially catastrophic failure.
3. Smaller form factor: This advantage follows from the higher breakdown voltage and thermal conductivity of SiC relative to silicon. If a silicon and a silicon carbide transistor were each designed to withstand up to the same breakdown voltage, the traditional silicon transistor would need to be much larger than the SiC transistor. The smaller SiC transistor could have as little as 0.25-0.5% as much “on” resistance as the larger silicon transistor. This property enables the design of more efficient and compact power electronic systems with lower power losses.
4. Higher switching frequencies: The smaller form factor of SiC transistors and consequent higher switching frequency enables the design of lighter weight and less expensive inductors and capacitors for use in a power converter like those used to charge EV batteries.
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